| 036a | XA-DE |
| 037b | eng |
| 077a | 372388183 Buchausg. u.d.T.: ‡Zhang, Yafei: Multilayer integrated film bulk acoustic resonators |
| 087q | 978-3-642-31775-0 |
| 100 | Zhang, Yafei |
| 104b | Chen, Da |
| 331 | Multilayer Integrated Film Bulk Acoustic Resonators |
| 410 | Berlin, Heidelberg |
| 412 | Springer |
| 425 | 2013 |
| 425a | 2013 |
| 433 | Online-Ressource (X, 152 p. 97 illus, digital) |
| 451b | SpringerLink. Bücher |
| 501 | Description based upon print version of record |
| 517 | Multilayer Integrated Film Bulk Acoustic Resonators; Preface; Contents; Chapter 1: Introduction; 1.1 RF Filters in GHz Wireless Applications; 1.1.1 The Requirement of RF Filters; 1.1.2 Types of RF Filters; 1.2 Bulk Acoustic Wave (BAW) Resonator and Its Development; 1.2.1 BAW Resonator; 1.2.2 Micro Electromechanical Systems (MEMS) Applied in BAW; 1.3 The Principle and Configurations of FBAR; 1.3.1 The Principle of FBAR; 1.3.2 Typical FBAR Configurations; 1.3.3 Current Status of FBAR Filters; 1.4 The Application of FBAR in Mass Loading Sensors; 1.4.1 Acoustic Resonant Mass Sensors. 1.4.2 FBAR Mass Loading Sensors1.5 Overview of the Chapters; References; Chapter 2: Propagation of Acoustic Wave in Crystals; 2.1 The Equation of Acoustic Plane Wave; 2.1.1 The Equation of Elastic Deformation; 2.1.2 Christoffel Equation; 2.2 Propagation of Plane Wave in Isotropic Medium; 2.3 Propagation of Plane Wave in Anisotropic Medium; 2.3.1 Dispersion Relation and Inverse Velocity Face; 2.3.2 The Solution of Wave Equation in Cubic Crystal; 2.4 Piezoelectrically Active Wave Propagation; 2.5 The Plane Wave Propagating in Piezoelectric Hexagonal Crystal; References. Chapter 3: The Theory of FBAR3.1 The Electric Impedance of the Ideal FBAR; 3.1.1 The Analytic Expression of the Electric Impedance; 3.1.2 The Resonance of FBAR; 3.2 The Electric Impedance of the Compound FBAR; 3.2.1 The Definition of the Acoustic Impedance; 3.2.2 The Boundary Condition of Compound FBAR; 3.3 The Loss and Performances of FBAR; 3.4 The Equivalent Electromechanical Mode of FBAR; 3.4.1 The Equivalent Mode of the Layers; 3.4.2 The Universal Equivalent Mode of FBAR; 3.4.3 The Equivalent Circuit Nears the Resonance of FBAR. 3.5 The Calculated Influence of the Materials and Structure on the Device Performance3.5.1 The Effects of the Electrode; 3.5.2 The Influences of Supporting Layer and the Residue Silicon Layer; References; Chapter 4: The Deposition and Etching of AlN Film; 4.1 Deposition of AlN Film by RF Magnetron Sputtering; 4.1.1 Introduction; 4.1.2 Experimental; 4.1.3 The Effect of RF Power on the Film Texture; 4.1.4 The Influence of Ambit Pressure and the Ratio of N2/Ar on the Film Structure; 4.1.5 The Influence of the Substrate Temperature on the Film Texture. 4.1.6 The Microstructure and Chemical Component4.2 The Structural Characteristics of AlN Films Deposited on Different Electrodes; 4.3 Dry Etching of AlN Films Using Fluoride Plasma; 4.3.1 The Dry Etching of AlN Films; 4.3.2 Experimental; 4.3.3 The Etching Rate; 4.3.4 The Morphologies; 4.3.5 The Etching Mechanism; 4.4 The Wet Etching of AlN; 4.4.1 The Wet Etching Process; 4.4.2 Experimental; 4.4.3 The Influence of the Film Texture; 4.4.4 The Effects of Crystal Quality; References; Chapter 5: The FBAR with Membrane Structure; 5.1 The Structure and Testing Method. 5.1.1 The Structure of the Device |
| 527 | Buchausg. u.d.T.: ‡Zhang, Yafei: Multilayer integrated film bulk acoustic resonators |
| 540a | ISBN 978-3-642-31776-7 |
| 700 | |TDPB |
| 700 | |TEC027000 |
| 700b | |620.5 |
| 700c | |T174.7 |
| 750 | "Multilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory, design, fabrication technology and application of a recently developed new type of device, multilayer integrated film bulk acoustic resonators, at the micro and nano scale involving microelectronic devices, integrated circuits, optical devices, sensors and actuators, acoustic resonators, micro-nano manufacturing, multilayer integration, device theory and design principles, etc. These devices can work at very high frequencies by using the newly developed theory, design, and fabrication technology of nano and micro devices. Readers in fields of IC, electronic devices, sensors, materials, and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices. Prof. Yafei Zhang is the director of the Ministry of Education's Key Laboratory for Thin Films and Microfabrication Technology, PRC; Dr. Da Chen was a PhD student in Prof. Yafei Zhang's research group"--Provided by publisher |
| 753 | Mulilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory, design, fabrication technology and application of a recently developed new type of device, multilayer integrated film bulk acoustic resonators, at the micro and nano scale involving microelectronic devices, integrated circuits, optical devices, sensors and actuators, acoustic resonators, micro-nano manufacturing, multilayer integration, device theory and design principles, etc. These devices can work at very high frequencies by using the newly developed theory, design, and fabrication technology of nano and micro devices. Readers in fields of IC, electronic devices, sensors, materials, and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices. Prof. Yafei Zhang is the director of the Ministry of Educations Key Laboratory for Thin Films and Microfabrication Technology, PRC; Dr. Da Chen was a PhD student in Prof. Yafei Zhangs research group. |
| 902s | 375427074 FBAR-Technologie |
| 902s | 253448522 Mikrofertigung |
| 902s | 209922036 Mehrschichtschaltung |
| 012 | 373431074 |
| 081 | Zhang, Yafei: Multilayer Integrated Film Bulk Acoustic Resonators |
| 100 | Springer E-Book |
| 125a | Elektronischer Volltext - Campuslizenz |
| 655e | $uhttp://dx.doi.org/10.1007/978-3-642-31776-7 |
