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Advanced Gate Stacks for High-Mobility Semiconductors
Kategorie	Beschreibung
036a	XA-DE
037b	eng
077a	277080878 Buchausg. u.d.T.: ‡Advanced gate stacks for high-mobility semiconductors
087q	978-3-540-71490-3
100b	Dimoulas, Athanasios
104b	Gusev, Evgeni
108b	Heyns, Marc
112b	McIntyre, Paul C.
331	Advanced Gate Stacks for High-Mobility Semiconductors
410	Berlin, Heidelberg
412	Springer Berlin Heidelberg
425	2007
425a	2007
433	Online-Ressource (digital)
451	Advanced Microelectronics ; 27
527	Buchausg. u.d.T.: ‡Advanced gate stacks for high-mobility semiconductors
540a	ISBN 978-3-540-71491-0
700	\|TEC008070
700	\|TJF
700	\|TEC008000
700b	\|621.381
700c	\|TK7800-8360
700c	\|TK7874-7874.9
700g	1271560968 ZN 3460
700g	1271498537 ZN 4960
700g	1271495805 UP 4600
750	Strained-Si CMOS Technology -- High Current Drivability MOSFET Fabricated on Si(110) Surface -- Advanced High-Mobility Semiconductor-on-Insulator Materials -- Passivation and Characterization of Germanium Surfaces -- Interface Engineering for High-? Ge MOSFETs -- Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-?/Metal Gate Metal-Oxide-Semiconductor Devices -- Modeling of Growth of High-? Oxides on Semiconductors -- Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs -- Point Defects in Stacks of High-? Metal Oxides on Ge: Contrast with the Si Case -- High ? Gate Dielectrics for Compound Semiconductors -- Interface Properties of High-? Dielectrics on Germanium -- A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-? Materials and Films -- Germanium Nanodevices and Technology -- Opportunities and Challenges of Germanium Channel MOSFETs -- Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates -- Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics -- Fabrication of MBE High-? MOSFETs in a Standard CMOS Flow.
753	Will nanoelectronic devices continue to scale according to Moore’s law? At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator)? Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds? Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology? How do these materials and devices behave at the nanoscale? The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.
902s	209617020 MOS
902s	277967600 High-k-Dielektrikum
902s	209662492 Germanium
902s	20978170X Drei-Fünf-Halbleiter
902f	00000011 Aufsatzsammlung
012	280565909
081	Advanced Gate Stacks for High-Mobility Semiconductors
100	Springer E-Book
125a	Elektronischer Volltext - Campuslizenz
655e	$uhttp://dx.doi.org/10.1007/978-3-540-71491-0